LNC045R090 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNC045R090  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-220

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LNC045R090 datasheet

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LNC045R090

LNC045R090/LNG045R090/LNH045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 9m GS technology. This advanced technology has been I 70A D especially tailored to minimize on-state resistance, provide superior switching performance, and with

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LNC045R090

LNC04R035B/ LND04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 3.5m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and with st

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LNC045R090

LNC04R050 Lonten N-channel 40V, 110A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 5.0m GS technology. This advanced technology has been I 110A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high ener

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