LNC045R090 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNC045R090
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49.3 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220
LNC045R090 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNC045R090 Datasheet (PDF)
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