LNC04R035B Todos los transistores

 

LNC04R035B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNC04R035B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 677 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de LNC04R035B MOSFET

   - Selección ⓘ de transistores por parámetros

 

LNC04R035B datasheet

 ..1. Size:728K  lonten
 lnc04r035b lnd04r035b.pdf pdf_icon

LNC04R035B

LNC04R035B/ LND04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 3.5m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and with st

 7.1. Size:889K  lonten
 lnc04r050.pdf pdf_icon

LNC04R035B

LNC04R050 Lonten N-channel 40V, 110A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 5.0m GS technology. This advanced technology has been I 110A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high ener

 9.1. Size:918K  lonten
 lnc045r090 lng045r090 lnh045r090.pdf pdf_icon

LNC04R035B

LNC045R090/LNG045R090/LNH045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 9m GS technology. This advanced technology has been I 70A D especially tailored to minimize on-state resistance, provide superior switching performance, and with

Otros transistores... 5N65N , 6N65F , 6N65D , LNB10R040W3 , LNB20N60 , LNB20N65 , LNB4N80 , LNC045R090 , AON6414A , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H .

 

 

 


 
↑ Back to Top
.