LNC04R035B Datasheet. Specs and Replacement
Type Designator: LNC04R035B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 677 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220
LNC04R035B substitution
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LNC04R035B datasheet
lnc04r035b lnd04r035b.pdf
LNC04R035B/ LND04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 3.5m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and with st... See More ⇒
lnc04r050.pdf
LNC04R050 Lonten N-channel 40V, 110A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 5.0m GS technology. This advanced technology has been I 110A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high ener... See More ⇒
lnc045r090 lng045r090 lnh045r090.pdf
LNC045R090/LNG045R090/LNH045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 9m GS technology. This advanced technology has been I 70A D especially tailored to minimize on-state resistance, provide superior switching performance, and with... See More ⇒
Detailed specifications: 5N65N, 6N65F, 6N65D, LNB10R040W3, LNB20N60, LNB20N65, LNB4N80, LNC045R090, AON6414A, LNC04R050, LNC06R062, LNC06R079, LNC06R110, LNC06R140, LNC06R200, LNC06R230, LNC07R085H
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