LNC06R079 Todos los transistores

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 lnc06r079 lnd06r079 lne06r079.pdf

LNC06R079/LND06R079/LNE06R079 Lonten N-channel 60V, 90A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.9m GS technology. This advanced technology has been I 90A D especially tailored to minimize on-state resistance, provide superior switching performance, and wit

 7.1. Size:1130K  lonten
 lnc06r062 lnd06r062 lne06r062.pdf

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit

 8.1. Size:1062K  lonten
 lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,

 8.2. Size:795K  lonten
 lnh06r230 lng06r230 lnc06r230.pdf

LNH06R230/LNG06R230/LNC06R230 Lonten N-channel 60V, 33A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 33A D especially tailored to minimize on-state resistance, provide superior switching performance, and with

 8.3. Size:928K  lonten
 lnc06r110 lne06r110.pdf

LNC06R110/LNE06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 11m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig

 8.4. Size:784K  lonten
 lnh06r200 lng06r200 lnc06r200.pdf

LNH06R200/LNG06R200/LNC06R200 Lonten N-channel 60V, 35A, 20m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 20m GS technology. This advanced technology has been I 35A D especially tailored to minimize on-state resistance, provide superior switching performance, and with