LNC06R079 Todos los transistores

 

LNC06R079 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNC06R079
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 125 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 90 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.8 V
   Carga de la puerta (Qg): 69 nC
   Tiempo de subida (tr): 170 nS
   Conductancia de drenaje-sustrato (Cd): 269 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0079 Ohm
   Paquete / Cubierta: TO-220

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LNC06R079 Datasheet (PDF)

 ..1. Size:1191K  lonten
lnc06r079 lnd06r079 lne06r079.pdf

LNC06R079
LNC06R079

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit

 7.1. Size:1130K  lonten
lnc06r062 lnd06r062 lne06r062.pdf

LNC06R079
LNC06R079

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit

 8.1. Size:1062K  lonten
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R079
LNC06R079

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 8.2. Size:795K  lonten
lnh06r230 lng06r230 lnc06r230.pdf

LNC06R079
LNC06R079

LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with

 8.3. Size:928K  lonten
lnc06r110 lne06r110.pdf

LNC06R079
LNC06R079

LNC06R110/LNE06R110Lonten N-channel 60V, 60A, 11m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 11mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

 8.4. Size:784K  lonten
lnh06r200 lng06r200 lnc06r200.pdf

LNC06R079
LNC06R079

LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with

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