LNC06R079 Datasheet. Specs and Replacement
Type Designator: LNC06R079 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 269 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TO-220
LNC06R079 substitution
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LNC06R079 datasheet
lnc06r079 lnd06r079 lne06r079.pdf
LNC06R079/LND06R079/LNE06R079 Lonten N-channel 60V, 90A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.9m GS technology. This advanced technology has been I 90A D especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒
lnc06r062 lnd06r062 lne06r062.pdf
LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒
lnh06r230 lng06r230 lnc06r230.pdf
LNH06R230/LNG06R230/LNC06R230 Lonten N-channel 60V, 33A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 33A D especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒
Detailed specifications: LNB10R040W3, LNB20N60, LNB20N65, LNB4N80, LNC045R090, LNC04R035B, LNC04R050, LNC06R062, P55NF06, LNC06R110, LNC06R140, LNC06R200, LNC06R230, LNC07R085H, LNC08R055W3, LNC08R085, LNC08R160
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