LNC06R200 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNC06R200
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 105 nS
Cossⓘ - Capacitancia de salida: 151 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de LNC06R200 MOSFET
LNC06R200 Datasheet (PDF)
lnh06r200 lng06r200 lnc06r200.pdf

LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh06r230 lng06r230 lnc06r230.pdf

LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnc06r062 lnd06r062 lne06r062.pdf

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
Otros transistores... LNB4N80 , LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , STP75NF75 , LNC06R230 , LNC07R085H , LNC08R055W3 , LNC08R085 , LNC08R160 , LNC08R220 , LNC10N60 , LNC10N65 .
History: LNG05R155 | PHB95NQ04LT | 2SK2531 | IPA60R280P7 | HM26N18K | LNG06R062 | AON6786
History: LNG05R155 | PHB95NQ04LT | 2SK2531 | IPA60R280P7 | HM26N18K | LNG06R062 | AON6786



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
2n388 | 2n3645 | 2n1307 | 2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent