Справочник MOSFET. LNC06R200

 

LNC06R200 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LNC06R200
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 50 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 35 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 29.5 nC
   Время нарастания (tr): 105 ns
   Выходная емкость (Cd): 151 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для LNC06R200

 

 

LNC06R200 Datasheet (PDF)

 ..1. Size:784K  lonten
 lnh06r200 lng06r200 lnc06r200.pdf

LNC06R200 LNC06R200

LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with

 7.1. Size:795K  lonten
 lnh06r230 lng06r230 lnc06r230.pdf

LNC06R200 LNC06R200

LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with

 8.1. Size:1130K  lonten
 lnc06r062 lnd06r062 lne06r062.pdf

LNC06R200 LNC06R200

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit

 8.2. Size:1062K  lonten
 lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R200 LNC06R200

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 8.3. Size:1191K  lonten
 lnc06r079 lnd06r079 lne06r079.pdf

LNC06R200 LNC06R200

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit

 8.4. Size:928K  lonten
 lnc06r110 lne06r110.pdf

LNC06R200 LNC06R200

LNC06R110/LNE06R110Lonten N-channel 60V, 60A, 11m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 11mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

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