LNE06R110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNE06R110 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 167.5 nS
Cossⓘ - Capacitancia de salida: 209 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Encapsulados: TO-263
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LNE06R110 datasheet
lnc06r110 lne06r110.pdf
LNC06R110/LNE06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 11m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance,
lnc06r062 lnd06r062 lne06r062.pdf
LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit
lnc06r079 lnd06r079 lne06r079.pdf
LNC06R079/LND06R079/LNE06R079 Lonten N-channel 60V, 90A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.9m GS technology. This advanced technology has been I 90A D especially tailored to minimize on-state resistance, provide superior switching performance, and wit
Otros transistores... LND5N65B, LND7N60, LND7N60D, LND7N65D, LNDN10N65, LNDN12N65, LNE06R062, LNE06R079, IRLB3034, LNE06R140, LNE07R085H, LNE08R055W3, LNE08R085, LNE08R160, LNE10N60, LNE10N65, LNE10R040W3
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