LNE08R055W3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNE08R055W3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 189 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38.9 nS
Cossⓘ - Capacitancia de salida: 888 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO-263
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LNE08R055W3 Datasheet (PDF)
lnc08r055w3 lnd08r055w3 lne08r055w3.pdf

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LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
Otros transistores... LND7N65D , LNDN10N65 , LNDN12N65 , LNE06R062 , LNE06R079 , LNE06R110 , LNE06R140 , LNE07R085H , EMB04N03H , LNE08R085 , LNE08R160 , LNE10N60 , LNE10N65 , LNE10R040W3 , LNE10R180 , LNE12N60 , LNE12N65 .
History: CJ2307 | STP150N10F7 | 2N3970 | IRFHM4226 | NDP608AE | STP15N65M5 | SVT10111ND
History: CJ2307 | STP150N10F7 | 2N3970 | IRFHM4226 | NDP608AE | STP15N65M5 | SVT10111ND



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