All MOSFET. LNE08R055W3 Datasheet

 

LNE08R055W3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNE08R055W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 189 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 38.9 nS
   Cossⓘ - Output Capacitance: 888 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-263

 LNE08R055W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNE08R055W3 Datasheet (PDF)

 ..1. Size:1141K  lonten
 lnc08r055w3 lnd08r055w3 lne08r055w3.pdf

LNE08R055W3 LNE08R055W3

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

 7.1. Size:1349K  lonten
 lnc08r085 lnd08r085 lne08r085.pdf

LNE08R055W3 LNE08R055W3

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

 8.1. Size:989K  lonten
 lnc08r160 lne08r160.pdf

LNE08R055W3 LNE08R055W3

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK661R9-40C

 

 
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