LNE10N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LNE10N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 31.4 nC
   trⓘ - Tiempo de subida: 32.6 nS
   Cossⓘ - Capacitancia de salida: 138.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-263

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LNE10N60 Datasheet (PDF)

..1. Size:1046K lonten
lnd10n60 lnc10n60 lne10n60 lnf10n60.pdf

LND10N60/LNC10N60/LNE10N60/LNF10N60 Lonten N-channel 600V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 0.9 superior switching performance and high avalance Qg,typ 31.4 nC energy. Features Low RDS(on) Low gate

7.1. Size:1293K lonten
lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)

7.2. Size:1051K lonten
lnd10n65 lnc10n65 lne10n65 lnf10n65.pdf

LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate

9.1. Size:1003K lonten
lnc10r180 lnd10r180 lne10r180.pdf

LNC10R180\LND10R180/LNE10R180 Lonten N-channel 100V, 80A, 18m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 100V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 18m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

9.2. Size:772K lonten
lnc10r040w3 lnd10r040w3 lne10r040w3 lnb10r040w3.pdf

LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF6645 | BBS3002 | IRF6612

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