LNE10N60 MOSFET Datasheet: N-Ch, 600V, 10A. Full specification with pinout and replacement list

LNE10N60 Specs and Replacement

Type Designator: LNE10N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.6 nS

Cossⓘ - Output Capacitance: 138.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-263

LNE10N60 substitution

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LNE10N60 datasheet

..1. Size:1046K lonten
lnd10n60 lnc10n60 lne10n60 lnf10n60.pdf pdf_icon

LND10N60/LNC10N60/LNE10N60/LNF10N60 Lonten N-channel 600V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 0.9 superior switching performance and high avalance Qg,typ 31.4 nC energy. Features Low RDS(on) Low gate ... See More ⇒

7.1. Size:1293K lonten
lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf pdf_icon

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 10A D resulting device has low conduction resistance, R 1.0 DS(on),max superior switching performance and high avalanche Q 34.2 nC g,typ energy. Features Low R DS(on) ... See More ⇒

7.2. Size:1051K lonten
lnd10n65 lnc10n65 lne10n65 lnf10n65.pdf pdf_icon

LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate... See More ⇒

9.1. Size:1003K lonten
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LNC10R180 LND10R180/LNE10R180 Lonten N-channel 100V, 80A, 18m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 100V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 18m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒