All MOSFET. LNE10N60 Datasheet

 

LNE10N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNE10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.4 nC
   trⓘ - Rise Time: 32.6 nS
   Cossⓘ - Output Capacitance: 138.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-263

 LNE10N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNE10N60 Datasheet (PDF)

 ..1. Size:1046K  lonten
 lnd10n60 lnc10n60 lne10n60 lnf10n60.pdf

LNE10N60 LNE10N60

LND10N60/LNC10N60/LNE10N60/LNF10N60 Lonten N-channel 600V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 0.9 superior switching performance and high avalance Qg,typ 31.4 nC energy. Features Low RDS(on) Low gate

 7.1. Size:1293K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf

LNE10N60 LNE10N60

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)

 7.2. Size:1051K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65.pdf

LNE10N60 LNE10N60

LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate

 9.1. Size:1003K  lonten
 lnc10r180 lnd10r180 lne10r180.pdf

LNE10N60 LNE10N60

LNC10R180\LND10R180/LNE10R180 Lonten N-channel 100V, 80A, 18m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 100V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 18m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

 9.2. Size:772K  lonten
 lnc10r040w3 lnd10r040w3 lne10r040w3 lnb10r040w3.pdf

LNE10N60 LNE10N60

LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AP75N07AGP-HF | 2N7272H4

 

 
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