LNG045R055 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNG045R055
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 216.4 nS
Cossⓘ - Capacitancia de salida: 344 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de LNG045R055 MOSFET
LNG045R055 Datasheet (PDF)
lnh045r055 lng045r055.pdf

LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnc045r090 lng045r090 lnh045r090.pdf

LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh045r090 lng045r090.pdf

LNH045R090/LNG045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 9m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh045r140 lng045r140.pdf

LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
Otros transistores... LNF4N65 , LNF7N65D , XR46000ESETR , MC2539 , MF5853CS , NP2301AMR-G , NP8205MR , LNG03R031 , IRF1404 , LNG045R090 , LNG045R140 , LNG045R210 , LNG04R035B , LNG04R050 , LNG04R075 , LNG04R120 , LNG04R165 .
History: IRL530NSPBF | APT1201R4BLL | PSMN3R7-100BSE | NDS335N | APT20M16LFLL | VN1206N5 | SMG5406
History: IRL530NSPBF | APT1201R4BLL | PSMN3R7-100BSE | NDS335N | APT20M16LFLL | VN1206N5 | SMG5406



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