LNG04R165 Todos los transistores

 

LNG04R165 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNG04R165
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18.6 nS
   Cossⓘ - Capacitancia de salida: 127 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
   Paquete / Cubierta: TO-252
 
   - Selección ⓘ de transistores por parámetros

 

LNG04R165 Datasheet (PDF)

 ..1. Size:966K  lonten
 lng04r165 lnh04r165.pdf pdf_icon

LNG04R165

LNG04R165/LNH04R165Lonten N-channel 40V, 39A, 16.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 16.5mGStechnology. This advanced technology has been I 39ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withPin C

 7.1. Size:991K  lonten
 lnh04r120 lng04r120.pdf pdf_icon

LNG04R165

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 8.1. Size:1148K  lonten
 lnh04r075 lng04r075.pdf pdf_icon

LNG04R165

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 8.2. Size:1002K  lonten
 lng04r035b lnh04r035b.pdf pdf_icon

LNG04R165

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

MOSTRAR MÁS

Otros transistores... LNG045R055 , LNG045R090 , LNG045R140 , LNG045R210 , LNG04R035B , LNG04R050 , LNG04R075 , LNG04R120 , IRFB4227 , LNG05R075 , LNG05R100 , LNG05R155 , LNG05R230 , LNG06R062 , LNG06R079 , LNG06R110 , LNG06R140 .

 

 
Back to Top

 


 
.