LNG04R165 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNG04R165  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18.6 nS

Cossⓘ - Capacitancia de salida: 127 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm

Encapsulados: TO-252

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LNG04R165 datasheet

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LNG04R165

LNG04R165/LNH04R165 Lonten N-channel 40V, 39A, 16.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 16.5m GS technology. This advanced technology has been I 39A D especially tailored to minimize on-state resistance, provide superior switching performance, and with Pin C

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LNG04R165

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

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LNG04R165

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

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LNG04R165

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

MOSTRAR MÁS

Otros transistores... LNG045R055, LNG045R090, LNG045R140, LNG045R210, LNG04R035B, LNG04R050, LNG04R075, LNG04R120, IRF3710, LNG05R075, LNG05R100, LNG05R155, LNG05R230, LNG06R062, LNG06R079, LNG06R110, LNG06R140