LNH045R055 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNH045R055
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 45 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 85 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 216.4 nS
Conductancia de drenaje-sustrato (Cd): 344 pF
Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MOSFET LNH045R055
LNH045R055 Datasheet (PDF)
lnh045r055 lng045r055.pdf
LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnc045r090 lng045r090 lnh045r090.pdf
LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh045r090 lng045r090.pdf
LNH045R090/LNG045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 9m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh045r140 lng045r140.pdf
LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh045r210 lng045r210.pdf
LNH045R210/LNG045R210Lonten N-channel 45V, 35A, 21m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 21mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h
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