LNH045R055 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LNH045R055
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 216.4 ns
Cossⓘ - Выходная емкость: 344 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: TO-251
Аналог (замена) для LNH045R055
LNH045R055 Datasheet (PDF)
lnh045r055 lng045r055.pdf
LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnc045r090 lng045r090 lnh045r090.pdf
LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh045r090 lng045r090.pdf
LNH045R090/LNG045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 9m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh045r140 lng045r140.pdf
LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh045r210 lng045r210.pdf
LNH045R210/LNG045R210Lonten N-channel 45V, 35A, 21m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 21mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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