LNH045R055 - описание и поиск аналогов

LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

LNC045R090/LNG045R090/LNH045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 9m GS technology. This advanced technology has been I 70A D especially tailored to minimize on-state resistance, provide superior switching performance, and with

LNH045R090/LNG045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 9m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

LNH045R210/LNG045R210 Lonten N-channel 45V, 35A, 21m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 21m GS technology. This advanced technology has been I 35A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h