LNH04R035B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNH04R035B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 677 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de LNH04R035B MOSFET
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LNH04R035B datasheet
lng04r035b lnh04r035b.pdf
LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta
lnh04r075 lng04r075.pdf
LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh04r050 lng04r050.pdf
LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnh04r120 lng04r120.pdf
LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
Otros transistores... LNG5N65B , LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , 5N65 , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , LNH05R075 , LNH05R100 , LNH05R155 , LNH05R230 .
History: LNH04R120
History: LNH04R120
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