Справочник MOSFET. LNH04R035B

 

LNH04R035B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LNH04R035B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 139 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 677 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для LNH04R035B

 

 

LNH04R035B Datasheet (PDF)

 ..1. Size:1002K  lonten
 lng04r035b lnh04r035b.pdf

LNH04R035B LNH04R035B

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

 7.1. Size:1148K  lonten
 lnh04r075 lng04r075.pdf

LNH04R035B LNH04R035B

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 7.2. Size:1068K  lonten
 lnh04r050 lng04r050.pdf

LNH04R035B LNH04R035B

LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 8.1. Size:991K  lonten
 lnh04r120 lng04r120.pdf

LNH04R035B LNH04R035B

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 8.2. Size:966K  lonten
 lng04r165 lnh04r165.pdf

LNH04R035B LNH04R035B

LNG04R165/LNH04R165Lonten N-channel 40V, 39A, 16.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 16.5mGStechnology. This advanced technology has been I 39ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withPin C

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