LNH04R050 Todos los transistores

 

LNH04R050 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNH04R050
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 213.6 nS
   Cossⓘ - Capacitancia de salida: 410.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO-251
 

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LNH04R050 Datasheet (PDF)

 ..1. Size:1068K  lonten
 lnh04r050 lng04r050.pdf pdf_icon

LNH04R050

LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 7.1. Size:1148K  lonten
 lnh04r075 lng04r075.pdf pdf_icon

LNH04R050

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 7.2. Size:1002K  lonten
 lng04r035b lnh04r035b.pdf pdf_icon

LNH04R050

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

 8.1. Size:991K  lonten
 lnh04r120 lng04r120.pdf pdf_icon

LNH04R050

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

MOSTRAR MÁS

Otros transistores... LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , IRF530 , LNH04R075 , LNH04R120 , LNH04R165 , LNH05R075 , LNH05R100 , LNH05R155 , LNH05R230 , LNH06R062 .

History: S-LNA2306LT1G | 2SK2074 | SPW20N60C3 | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 6N60KL-TA3-T

 

 
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