All MOSFET. LNH04R050 Datasheet

 

LNH04R050 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNH04R050
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66.7 nC
   trⓘ - Rise Time: 213.6 nS
   Cossⓘ - Output Capacitance: 410.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-251

 LNH04R050 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNH04R050 Datasheet (PDF)

 ..1. Size:1068K  lonten
 lnh04r050 lng04r050.pdf

LNH04R050 LNH04R050

LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 7.1. Size:1148K  lonten
 lnh04r075 lng04r075.pdf

LNH04R050 LNH04R050

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 7.2. Size:1002K  lonten
 lng04r035b lnh04r035b.pdf

LNH04R050 LNH04R050

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

 8.1. Size:991K  lonten
 lnh04r120 lng04r120.pdf

LNH04R050 LNH04R050

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 8.2. Size:966K  lonten
 lng04r165 lnh04r165.pdf

LNH04R050 LNH04R050

LNG04R165/LNH04R165Lonten N-channel 40V, 39A, 16.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 16.5mGStechnology. This advanced technology has been I 39ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withPin C

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1483

 

 
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