LNH04R120 Todos los transistores

 

LNH04R120 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNH04R120

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18.7 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO-251

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LNH04R120 datasheet

 ..1. Size:991K  lonten
 lnh04r120 lng04r120.pdf pdf_icon

LNH04R120

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 7.1. Size:966K  lonten
 lng04r165 lnh04r165.pdf pdf_icon

LNH04R120

LNG04R165/LNH04R165 Lonten N-channel 40V, 39A, 16.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 16.5m GS technology. This advanced technology has been I 39A D especially tailored to minimize on-state resistance, provide superior switching performance, and with Pin C

 8.1. Size:1148K  lonten
 lnh04r075 lng04r075.pdf pdf_icon

LNH04R120

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 8.2. Size:1002K  lonten
 lng04r035b lnh04r035b.pdf pdf_icon

LNH04R120

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta

MOSTRAR MÁS

Otros transistores... LNH03R031 , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , AON6380 , LNH04R165 , LNH05R075 , LNH05R100 , LNH05R155 , LNH05R230 , LNH06R062 , LNH06R079 , LNH06R110 .

 

 

 

 

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