LNH04R120 Specs and Replacement
Type Designator: LNH04R120
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.7 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-251
LNH04R120 substitution
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LNH04R120 datasheet
lnh04r120 lng04r120.pdf
LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒
lng04r165 lnh04r165.pdf
LNG04R165/LNH04R165 Lonten N-channel 40V, 39A, 16.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 16.5m GS technology. This advanced technology has been I 39A D especially tailored to minimize on-state resistance, provide superior switching performance, and with Pin C... See More ⇒
lnh04r075 lng04r075.pdf
LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi... See More ⇒
lng04r035b lnh04r035b.pdf
LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta... See More ⇒
Detailed specifications: LNH03R031, LNH045R055, LNH045R090, LNH045R140, LNH045R210, LNH04R035B, LNH04R050, LNH04R075, AON6380, LNH04R165, LNH05R075, LNH05R100, LNH05R155, LNH05R230, LNH06R062, LNH06R079, LNH06R110
Keywords - LNH04R120 MOSFET specs
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