LNH05R100 Todos los transistores

 

LNH05R100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNH05R100
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 50 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 64 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 49.7 nC
   Tiempo de subida (tr): 25.2 nS
   Conductancia de drenaje-sustrato (Cd): 207 pF
   Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
   Paquete / Cubierta: TO-251

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LNH05R100 Datasheet (PDF)

 ..1. Size:927K  lonten
lnh05r100 lng05r100.pdf

LNH05R100 LNH05R100

LNH05R100/LNG05R100Lonten N-channel 50V, 64A, 10m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 10mGStechnology. This advanced technology has been I 64ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

 7.1. Size:959K  lonten
lnh05r155 lng05r155.pdf

LNH05R100 LNH05R100

LNH05R155/LNG05R155Lonten N-channel 50V, 40A, 15.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 15.5mGStechnology. This advanced technology has been I 40ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

 8.1. Size:951K  lonten
lnh05r075 lng05r075.pdf

LNH05R100 LNH05R100

LNH05R075/LNG05R075Lonten N-channel 50V, 80A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h

 8.2. Size:940K  lonten
lnh05r230 lng05r230.pdf

LNH05R100 LNH05R100

LNH05R230/LNG05R230Lonten N-channel 50V, 32A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 32ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

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