LNH05R100 Specs and Replacement
Type Designator: LNH05R100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 207 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-251
LNH05R100 substitution
- MOSFET ⓘ Cross-Reference Search
LNH05R100 datasheet
lnh05r100 lng05r100.pdf
LNH05R100/LNG05R100 Lonten N-channel 50V, 64A, 10m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 10m GS technology. This advanced technology has been I 64A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
lnh05r155 lng05r155.pdf
LNH05R155/LNG05R155 Lonten N-channel 50V, 40A, 15.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 15.5m GS technology. This advanced technology has been I 40A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand... See More ⇒
lnh05r075 lng05r075.pdf
LNH05R075/LNG05R075 Lonten N-channel 50V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.5m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h... See More ⇒
lnh05r230 lng05r230.pdf
LNH05R230/LNG05R230 Lonten N-channel 50V, 32A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 32A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig... See More ⇒
Detailed specifications: LNH045R140, LNH045R210, LNH04R035B, LNH04R050, LNH04R075, LNH04R120, LNH04R165, LNH05R075, NCEP15T14, LNH05R155, LNH05R230, LNH06R062, LNH06R079, LNH06R110, LNH06R140, LNH06R200, LNH06R230
Keywords - LNH05R100 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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