LNH05R100 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNH05R100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 64 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49.7 nC
trⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 207 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-251
LNH05R100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNH05R100 Datasheet (PDF)
lnh05r100 lng05r100.pdf
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