LNH05R155 Todos los transistores

 

LNH05R155 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNH05R155

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 119 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm

Encapsulados: TO-251

 Búsqueda de reemplazo de LNH05R155 MOSFET

- Selecciónⓘ de transistores por parámetros

 

LNH05R155 datasheet

 ..1. Size:959K  lonten
 lnh05r155 lng05r155.pdf pdf_icon

LNH05R155

LNH05R155/LNG05R155 Lonten N-channel 50V, 40A, 15.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 15.5m GS technology. This advanced technology has been I 40A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 7.1. Size:927K  lonten
 lnh05r100 lng05r100.pdf pdf_icon

LNH05R155

LNH05R100/LNG05R100 Lonten N-channel 50V, 64A, 10m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 10m GS technology. This advanced technology has been I 64A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig

 8.1. Size:951K  lonten
 lnh05r075 lng05r075.pdf pdf_icon

LNH05R155

LNH05R075/LNG05R075 Lonten N-channel 50V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.5m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h

 8.2. Size:940K  lonten
 lnh05r230 lng05r230.pdf pdf_icon

LNH05R155

LNH05R230/LNG05R230 Lonten N-channel 50V, 32A, 23m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 50V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 23m GS technology. This advanced technology has been I 32A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hig

MOSTRAR MÁS

Otros transistores... LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , LNH05R075 , LNH05R100 , AON7506 , LNH05R230 , LNH06R062 , LNH06R079 , LNH06R110 , LNH06R140 , LNH06R200 , LNH06R230 , LNH06R310 .

History: UPA1873GR | BSS138LT1G

 

 

 

 

↑ Back to Top
.