LNH05R155 - параметры транзистора MOSFET, его аналоги, datasheet

LNH05R155 Datasheet (PDF)

..1. Size:959K lonten
lnh05r155 lng05r155.pdf pdf_icon

LNH05R155/LNG05R155Lonten N-channel 50V, 40A, 15.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 15.5mGStechnology. This advanced technology has been I 40ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

7.1. Size:927K lonten
lnh05r100 lng05r100.pdf pdf_icon

LNH05R100/LNG05R100Lonten N-channel 50V, 64A, 10m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 10mGStechnology. This advanced technology has been I 64ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

8.1. Size:951K lonten
lnh05r075 lng05r075.pdf pdf_icon

LNH05R075/LNG05R075Lonten N-channel 50V, 80A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h

8.2. Size:940K lonten
lnh05r230 lng05r230.pdf pdf_icon

LNH05R230/LNG05R230Lonten N-channel 50V, 32A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 32ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .