LNN04R050 Todos los transistores

 

LNN04R050 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNN04R050
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 213.6 nS
   Cossⓘ - Capacitancia de salida: 410.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: DFN5X6
 

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LNN04R050 Datasheet (PDF)

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LNN04R050

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 ..2. Size:956K  lonten
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LNN04R050

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.1. Size:936K  1
 lnn04r075.pdf pdf_icon

LNN04R050

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.2. Size:761K  lonten
 lnn04r040b.pdf pdf_icon

LNN04R050

LNN04R040BLonten N-channel 40V, 80A, 4m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 4.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

MOSTRAR MÁS

Otros transistores... LNH4N80 , LNH5N50 , LNH5N65B , LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , K2611 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 .

History: 2SJ307 | NCE50NF600I | AOD780A70 | RJK0601DPN-E0 | 2SK4058-ZK-E1-AY | APT43M60L | F15W50VX2

 

 
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