LNN04R075 Todos los transistores

 

LNN04R075 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LNN04R075
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110.6 nS
   Cossⓘ - Capacitancia de salida: 316 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: DFN5X6
     - Selección de transistores por parámetros

 

LNN04R075 Datasheet (PDF)

 ..1. Size:936K  1
 lnn04r075.pdf pdf_icon

LNN04R075

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 ..2. Size:936K  lonten
 lnn04r075.pdf pdf_icon

LNN04R075

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.1. Size:956K  1
 lnn04r050.pdf pdf_icon

LNN04R075

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.2. Size:956K  lonten
 lnn04r050.pdf pdf_icon

LNN04R075

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LNH4N60

 

 
Back to Top

 


 
.