Справочник MOSFET. LNN04R075

 

LNN04R075 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LNN04R075
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 110.6 ns
   Cossⓘ - Выходная емкость: 316 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: DFN5X6
     - подбор MOSFET транзистора по параметрам

 

LNN04R075 Datasheet (PDF)

 ..1. Size:936K  1
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LNN04R075

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 ..2. Size:936K  lonten
 lnn04r075.pdf pdf_icon

LNN04R075

LNN04R075Lonten N-channel 40V, 60A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.1. Size:956K  1
 lnn04r050.pdf pdf_icon

LNN04R075

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

 7.2. Size:956K  lonten
 lnn04r050.pdf pdf_icon

LNN04R075

LNN04R050Lonten N-channel 40V, 80A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEAP40T35ALL | STP40NF10L | LSB55R066GT | AP50T10GI-HF | STU618S | FIR18N50FG | AP6P090H

 

 
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