LSB65R070GF Todos los transistores

 

LSB65R070GF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSB65R070GF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 290 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.9 nS
   Cossⓘ - Capacitancia de salida: 2556 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

LSB65R070GF Datasheet (PDF)

 ..1. Size:962K  lonten
 lsb65r070gf.pdf pdf_icon

LSB65R070GF

LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density

 7.1. Size:1060K  lonten
 lsb65r099gf lsd65r099gf lse65r099gf.pdf pdf_icon

LSB65R070GF

LSB65R099GF/LSD65R099GF/LSE65R099GFLonFETLonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 66nCg,typ

 7.2. Size:807K  lonten
 lsb65r041gt.pdf pdf_icon

LSB65R070GF

LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density

 7.3. Size:813K  lonten
 lsb65r041gf.pdf pdf_icon

LSB65R070GF

LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SQD40P10-40L | NCEP070N10GU | RJK0629DPK | 2SK2907-01 | WMQ46N03T1 | RUH1H130S | FDB6690S

 

 
Back to Top

 


 
.