LSB65R070GF Specs and Replacement
Type Designator: LSB65R070GF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.9 nS
Cossⓘ - Output Capacitance: 2556 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-247
LSB65R070GF substitution
- MOSFET ⓘ Cross-Reference Search
LSB65R070GF datasheet
lsb65r070gf.pdf
LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density ... See More ⇒
lsb65r099gf lsd65r099gf lse65r099gf.pdf
LSB65R099GF/LSD65R099GF/LSE65R099GF LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 66nC g,typ ... See More ⇒
lsb65r041gt.pdf
LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density... See More ⇒
lsb65r041gf.pdf
LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density... See More ⇒
Detailed specifications: LSB60R105HF, LSB60R125HT, LSB60R170GF, LSB60R170GT, LSB60R180HT, LSB60R280HT, LSB65R041GF, LSB65R041GT, IRFZ44, LSB65R099GF, LSB65R099GT, LSB65R125HT, LSB65R180GF, LSB65R180GT, LSB65R180HT, LSB65R380HT, LSB80R350GT
Keywords - LSB65R070GF MOSFET specs
LSB65R070GF cross reference
LSB65R070GF equivalent finder
LSB65R070GF pdf lookup
LSB65R070GF substitution
LSB65R070GF replacement
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