LSC70R640GT Todos los transistores

 

LSC70R640GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSC70R640GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 23 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.64 Ohm

Encapsulados: TO-220

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LSC70R640GT datasheet

 ..1. Size:1238K  lonten
 lsc70r640gt lsd70r640gt lsg70r640gt lsh70r640gt lsf70r640gt.pdf pdf_icon

LSC70R640GT

LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic

 8.1. Size:1391K  lonten
 lsc70r380gt lsd70r380gt lse70r380gt lsf70r380gt lsg70r380gt.pdf pdf_icon

LSC70R640GT

LSC70R380GT/LSD70R380GT/ LSE70R380GT/LSF70R380GT/LSG70R380GT LonFET Lonten N-channel 700V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 750V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which

Otros transistores... LSC65R280HT , LSC65R290HF , LSC65R380GF , LSC65R380GT , LSC65R380HT , LSC65R570GT , LSC65R650HT , LSC70R380GT , IRFP260 , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , LSD55R140GT , LSD60R070HT .

History: AP20P02GJ | AP15T25H-HF | AP04N60J | SI1032X | LSD65R570GT | AP3P9R0J | IRFS240B

 

 

 

 

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