LSD55R066GT Todos los transistores

 

LSD55R066GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSD55R066GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 2500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm

Encapsulados: TO-220F

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LSD55R066GT datasheet

 ..1. Size:924K  lonten
 lsb55r066gt lsd55r066gt lse55r066gt.pdf pdf_icon

LSD55R066GT

LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n

 8.1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSD55R066GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/ LSF55R140GT/LSC55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which

 8.2. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSD55R066GT

LSB55R140GF/LSC55R140GF/LSD55R140GF/ LSE55R140GF/LSF55R140GF LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which

 8.3. Size:1268K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf pdf_icon

LSD55R066GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which require Q 40n

MOSTRAR MÁS

Otros transistores... LSC65R570GT , LSC65R650HT , LSC70R380GT , LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , 13N50 , LSD55R140GF , LSD55R140GT , LSD60R070HT , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF , LSD60R125HT .

History: IRF3000PBF | STD12NF06T4 | APTM100A23SCTG

 

 

 


History: IRF3000PBF | STD12NF06T4 | APTM100A23SCTG

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