LSD55R066GT Datasheet and Replacement
Type Designator: LSD55R066GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 2500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO-220F
LSD55R066GT substitution
LSD55R066GT Datasheet (PDF)
lsb55r066gt lsd55r066gt lse55r066gt.pdf

LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n
Datasheet: LSC65R570GT , LSC65R650HT , LSC70R380GT , LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , TK10A60D , LSD55R140GF , LSD55R140GT , LSD60R070HT , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF , LSD60R125HT .
History: SM4512NHKP | IRFU2905ZPBF | CJD01N65B | AO4614B | OSG65R580FTF | MPSY65M650 | DMN5L06-7
Keywords - LSD55R066GT MOSFET datasheet
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History: SM4512NHKP | IRFU2905ZPBF | CJD01N65B | AO4614B | OSG65R580FTF | MPSY65M650 | DMN5L06-7



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