LSD60R092GT Todos los transistores

 

LSD60R092GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSD60R092GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43.8 nS

Cossⓘ - Capacitancia de salida: 2500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm

Encapsulados: TO-220F

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LSD60R092GT datasheet

 ..1. Size:941K  lonten
 lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSD60R092GT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 4.1. Size:934K  lonten
 lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSD60R092GT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 6.1. Size:1047K  lonten
 lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSD60R092GT

LSB60R099HT/LSD60R099HT/LSE60R099HT LonFET Lonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 48nC g,typ

 7.1. Size:1049K  lonten
 lsb60r070ht lsd60r070ht.pdf pdf_icon

LSD60R092GT

LSB60R070HT/ LSD60R070HT LonFET Lonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.07 DS(on),max device has extremely low on resistance, making it I 141A DM especially suitable for applications which require Q 68nC g,typ superior pow

MOSTRAR MÁS

Otros transistores... LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , LSD55R140GT , LSD60R070HT , LSD60R092GF , IRFB3607 , LSD60R099HT , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT , LSD60R180HT , LSD60R1K4HT , LSD60R240HT .

History: SSP2N90A | FTA07N60 | FDC8878 | LSD60R099HT | LF2802A | LSD60R125HT | IRLL2705PBF

 

 

 

 

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