Справочник MOSFET. LSD60R092GT

 

LSD60R092GT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSD60R092GT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 43.8 ns
   Cossⓘ - Выходная емкость: 2500 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.092 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для LSD60R092GT

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSD60R092GT Datasheet (PDF)

 ..1. Size:941K  lonten
lsb60r092gt lsd60r092gt lse60r092gt.pdfpdf_icon

LSD60R092GT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 4.1. Size:934K  lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdfpdf_icon

LSD60R092GT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 6.1. Size:1047K  lonten
lsb60r099ht lsd60r099ht lse60r099ht.pdfpdf_icon

LSD60R092GT

LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ

 7.1. Size:1049K  lonten
lsb60r070ht lsd60r070ht.pdfpdf_icon

LSD60R092GT

LSB60R070HT/ LSD60R070HTLonFETLonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.07DS(on),maxdevice has extremely low on resistance, making it I 141ADMespecially suitable for applications which require Q 68nCg,typsuperior pow

Другие MOSFET... LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , LSD55R140GT , LSD60R070HT , LSD60R092GF , AON7506 , LSD60R099HT , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT , LSD60R180HT , LSD60R1K4HT , LSD60R240HT .

History: UFZ24NL-TA3 | 2SK2923 | CJU04N65

 

 
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