LSD60R650HT Todos los transistores

 

LSD60R650HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSD60R650HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 20.9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de LSD60R650HT MOSFET

   - Selección ⓘ de transistores por parámetros

 

LSD60R650HT Datasheet (PDF)

 ..1. Size:1295K  lonten
lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf pdf_icon

LSD60R650HT

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n

 8.1. Size:1094K  lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSD60R650HT

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

 8.2. Size:934K  lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSD60R650HT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 8.3. Size:1260K  lonten
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf pdf_icon

LSD60R650HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

Otros transistores... LSD60R170GF , LSD60R170GT , LSD60R180HT , LSD60R1K4HT , LSD60R240HT , LSD60R280HT , LSD60R290HF , LSD60R380HT , STF13NM60N , LSD65R099GF , LSD65R099GT , LSD65R105HF , LSD65R125HT , LSD65R180GF , LSD65R180GT , LSD65R180HT , LSD65R1K5HT .

History: SSF2316E | TPCP8106 | FIR20N60FG | VS3640DE

 

 
Back to Top

 


 
.