LSD60R650HT - описание и поиск аналогов

 

LSD60R650HT. Аналоги и основные параметры

Наименование производителя: LSD60R650HT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22 ns

Cossⓘ - Выходная емкость: 20.9 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO-220F

Аналог (замена) для LSD60R650HT

- подборⓘ MOSFET транзистора по параметрам

 

LSD60R650HT даташит

 ..1. Size:1295K  lonten
lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdfpdf_icon

LSD60R650HT

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HT LonFET Lonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.65 DS(on),max device has extremely low on resistance, making it I 21A DM especially suitable for applications which require Q 13.1 n

 8.1. Size:1094K  lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdfpdf_icon

LSD60R650HT

LSB60R105HF/LSD60R105HF/ LSE60R105HF/LSC60R105HF LonFET Lonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.105 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require

 8.2. Size:934K  lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdfpdf_icon

LSD60R650HT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 8.3. Size:1260K  lonten
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdfpdf_icon

LSD60R650HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Lonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which

Другие MOSFET... LSD60R170GF , LSD60R170GT , LSD60R180HT , LSD60R1K4HT , LSD60R240HT , LSD60R280HT , LSD60R290HF , LSD60R380HT , IRFP250 , LSD65R099GF , LSD65R099GT , LSD65R105HF , LSD65R125HT , LSD65R180GF , LSD65R180GT , LSD65R180HT , LSD65R1K5HT .

History: LDP9933ET1G | IRFH5304 | FDP027N08B

 

 

 

 

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