STP20N10L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP20N10LSTP20N10LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10L 100 V

isc N-Channel MOSFET Transistor STP20N10LFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10 100 V

STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V

STP20NF06STF20NF06N-channel 60V - 0.06 - 20A - TO-220/TO-220FPSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTP20NF06 60V

STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V

STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V

STP20NM65NSTF20NM65NN-channel 650 V, 0.250 , 15 A TO-220, TO-220FPsecond generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Order codes ID@Tjmax max.STP20NM65N710 V 0.270 15 ASTF20NM65N33 100 % avalanche tested2211 Low input capacitance and gate chargeTO-220TO-220FP Low gate input resistanceApplication Switching applicationsF

STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V

STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V

STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32

STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V

STP20N20STF20N20 - STD20N20N-CHANNEL 200V - 0.10 - 18A TO-220/TO-220FP/DPAKLOW GATE CHARGE STripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) Id PTOTSTD20N20 200 V

STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V

STP20NM60 - STP20NM60FPSTB20NM60 STB20NM60-1N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP20NM60 600 V

STB20NF06L - STF20NF06LSTP20NF06LN-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB20NF06L 60V

STP20NE06STP20NE06FPN - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06 60 V

STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V

STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V

STP20N06STP20N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N06 60 V

STF20NK50Z, STP20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected in TO-220FP and TO-220 packagesDatasheet production dataFeatures RDS(on) Order codes VDSS ID PTOTTABmaxSTF20NK50Z 500 V

STP20N60M2-EPN-channel 600 V, 0.230 typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. IDOrder codeTABSTB20N60M2-EP 600 V 0.278 13 A Extremely low gate charge32 Excellent output capacitance (COSS) profile1TO-220 Very low turn-off switching losses 100% avalanche tested Zener-protectedD(2, TAB)Applications

STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V

STP20NM50FDSTB20NM50FD-1N-CHANNEL 500V - 0.22 - 20ATO-220/I2PAKFDmesh Power MOSFET (with FAST DIODE)TYPE VDSS RDS(on) Rds(on)*Qg IDSTP20NM50FD 500V

STP20N06STP20N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N06 60 V

STP20NM50 - STP20NM50FPSTB20NM50 - STB20NM50-1N-CHANNEL 500V - 0.20 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP20NM50/FP 500V

STP20NK50Z - STW20NK50ZSTB20NK50ZN-CHANNEL 500V - 0.23 - 20A TO-220/D2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTB20NK50Z 500 V

STP20NE06STP20NE06FPN - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06 60 V

STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.07 - 20 A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP20NE06L 60 V

STP20NK50Z - STW20NK50ZN-CHANNEL 500V - 0.23 - 20A TO-220/TO-247Zener-Protected SuperMESHPower MOSFETTARGET DATATYPE VDSS RDS(on) ID PwSTP20NK50Z 500 V

STP20NE06STP20NE06FP N - CHANNEL 60V - 0.07 - 20A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP20NE06 60 V

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

STP20NE10 N - CHANNEL 100V - 0.07 - 20A - TO-220STripFET MOSFETTYPE VDSS RDS(on) IDSTP20NE10 100 V

STP20NE06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20NM60FEATURESTypical R (on)=0.25DSLow input capacitance and gate chargeLow gate input resistances100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for increasing power density of high voltage convertersallowing system miniat

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20N65M5FEATURESTypical R (on)=0.16DSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 V

isc N-Channel MOSFET Transistor STP20NM60FPFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL