STP20N10L
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STP20N10L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 105
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 140
ns
Cossⓘ - Выходная емкость: 250
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
STP20N10L
Datasheet (PDF)
..1. Size:379K st
stp20n10l.pdf 
STP20N10LSTP20N10LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10L 100 V
..2. Size:260K inchange semiconductor
stp20n10l.pdf 
isc N-Channel MOSFET Transistor STP20N10LFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
6.1. Size:343K st
stp20n10.pdf 
STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10 100 V
6.2. Size:140K st
stp20n10-.pdf 
STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V
8.1. Size:335K st
stp20nf06 stf20nf06.pdf 
STP20NF06STF20NF06N-channel 60V - 0.06 - 20A - TO-220/TO-220FPSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTP20NF06 60V
8.3. Size:309K st
stb20nm60a-1 stp20nm60a stf20nm60a.pdf 
STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V
8.4. Size:858K st
stp20nm65n stf20nm65n.pdf 
STP20NM65NSTF20NM65NN-channel 650 V, 0.250 , 15 A TO-220, TO-220FPsecond generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Order codes ID@Tjmax max.STP20NM65N710 V 0.270 15 ASTF20NM65N33 100 % avalanche tested2211 Low input capacitance and gate chargeTO-220TO-220FP Low gate input resistanceApplication Switching applicationsF
8.5. Size:315K st
stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf 
STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V
8.6. Size:1458K st
stb20n95k5 stf20n95k5 stp20n95k5 stw20n95k5.pdf 
STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
8.7. Size:401K st
stb20nm50fd stf20nm50fd stp20nm50fd.pdf 
STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
8.8. Size:1169K st
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf 
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32
8.9. Size:300K st
stp20nm60a.pdf 
STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V
8.10. Size:343K st
stp20n20.pdf 
STP20N20STF20N20 - STD20N20N-CHANNEL 200V - 0.10 - 18A TO-220/TO-220FP/DPAKLOW GATE CHARGE STripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) Id PTOTSTD20N20 200 V
8.11. Size:104K st
stp20ne06l.pdf 
STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V
8.12. Size:444K st
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf 
STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
8.13. Size:607K st
stb20nk50z stf20nk50z stw20nk50z stp20nk50z.pdf 
STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V
8.14. Size:535K st
stp20nm60.pdf 
STP20NM60 - STP20NM60FPSTB20NM60 STB20NM60-1N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP20NM60 600 V
8.15. Size:393K st
stb20nf06l stf20nf06l stp20nf06l.pdf 
STB20NF06L - STF20NF06LSTP20NF06LN-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB20NF06L 60V
8.16. Size:372K st
stp20ne06-fp.pdf 
STP20NE06STP20NE06FPN - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06 60 V
8.17. Size:107K st
stp20ne06l stp20ne06lfp.pdf 
STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06L 60 V
8.18. Size:344K st
stf20nm60d stp20nm60fd stw20nm60fd.pdf 
STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V
8.19. Size:391K st
stp20n06.pdf 
STP20N06STP20N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N06 60 V
8.20. Size:575K st
stf20nk50z stp20nk50z.pdf 
STF20NK50Z, STP20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected in TO-220FP and TO-220 packagesDatasheet production dataFeatures RDS(on) Order codes VDSS ID PTOTTABmaxSTF20NK50Z 500 V
8.21. Size:255K st
stp20n60m2-ep.pdf 
STP20N60M2-EPN-channel 600 V, 0.230 typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. IDOrder codeTABSTB20N60M2-EP 600 V 0.278 13 A Extremely low gate charge32 Excellent output capacitance (COSS) profile1TO-220 Very low turn-off switching losses 100% avalanche tested Zener-protectedD(2, TAB)Applications
8.22. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf 
STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V
8.23. Size:276K st
stp20nm50fd.pdf 
STP20NM50FDSTB20NM50FD-1N-CHANNEL 500V - 0.22 - 20ATO-220/I2PAKFDmesh Power MOSFET (with FAST DIODE)TYPE VDSS RDS(on) Rds(on)*Qg IDSTP20NM50FD 500V
8.24. Size:399K st
stp20n06-fi.pdf 
STP20N06STP20N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N06 60 V
8.25. Size:532K st
stp20nm50.pdf 
STP20NM50 - STP20NM50FPSTB20NM50 - STB20NM50-1N-CHANNEL 500V - 0.20 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP20NM50/FP 500V
8.26. Size:522K st
stp20nk50z.pdf 
STP20NK50Z - STW20NK50ZSTB20NK50ZN-CHANNEL 500V - 0.23 - 20A TO-220/D2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTB20NK50Z 500 V
8.27. Size:365K st
stp20ne06.pdf 
STP20NE06STP20NE06FPN - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP20NE06 60 V
8.28. Size:53K st
stp20ne06l-.pdf 
STP20NE06LSTP20NE06LFP N - CHANNEL 60V - 0.07 - 20 A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP20NE06L 60 V
8.29. Size:135K st
stp20nk50z stw20nk50z.pdf 
STP20NK50Z - STW20NK50ZN-CHANNEL 500V - 0.23 - 20A TO-220/TO-247Zener-Protected SuperMESHPower MOSFETTARGET DATATYPE VDSS RDS(on) ID PwSTP20NK50Z 500 V
8.30. Size:44K st
stp20ne06--.pdf 
STP20NE06STP20NE06FP N - CHANNEL 60V - 0.07 - 20A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP20NE06 60 V
8.32. Size:81K st
stp20ne10.pdf 
STP20NE10 N - CHANNEL 100V - 0.07 - 20A - TO-220STripFET MOSFETTYPE VDSS RDS(on) IDSTP20NE10 100 V
8.33. Size:1041K cn vbsemi
stp20ne06l.pdf 
STP20NE06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D
8.34. Size:189K inchange semiconductor
stp20nm60.pdf 
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20NM60FEATURESTypical R (on)=0.25DSLow input capacitance and gate chargeLow gate input resistances100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for increasing power density of high voltage convertersallowing system miniat
8.35. Size:205K inchange semiconductor
stp20n65m5.pdf 
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20N65M5FEATURESTypical R (on)=0.16DSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 V
8.36. Size:255K inchange semiconductor
stp20nm60fp.pdf 
isc N-Channel MOSFET Transistor STP20NM60FPFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
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