LSE80R680GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LSE80R680GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 19.5 nC
   Tiempo de subida (tr): 30 nS
   Conductancia de drenaje-sustrato (Cd): 26 pF
   Resistencia entre drenaje y fuente RDS(on): 0.68 Ohm
   Paquete / Cubierta: TO-263

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LSE80R680GT Datasheet (PDF)

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lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf

LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat

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lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf

LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat

8.2. Size:1197K lonten
lsb80r350gt lsc80r350gt lsd80r350gt lse80r350gt lsf80r350gt.pdf

LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which

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