LSF55R140GT Todos los transistores

 

LSF55R140GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSF55R140GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 76.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO-262

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LSF55R140GT datasheet

 ..1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSF55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/ LSF55R140GT/LSC55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which

 ..2. Size:1268K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf pdf_icon

LSF55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which require Q 40n

 4.1. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSF55R140GT

LSB55R140GF/LSC55R140GF/LSD55R140GF/ LSE55R140GF/LSF55R140GF LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which

Otros transistores... LSE65R650HT , LSE70R380GT , LSE70R450GT , LSE80R350GT , LSE80R680GT , LSE80R980GT , LSF50R160HT , LSF55R140GF , IRF630 , LSF60R180HT , LSF60R240HT , LSF60R280HT , LSF60R290HF , LSF60R380HT , LSF65R125HT , LSF65R180GF , LSF65R180GT .

History: BLF7G27L-135 | FDS9400A

 

 

 

 

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