LSF55R140GT Todos los transistores

 

LSF55R140GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSF55R140GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 205 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 76.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-262
 

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LSF55R140GT Datasheet (PDF)

 ..1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSF55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 ..2. Size:1268K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf pdf_icon

LSF55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n

 4.1. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSF55R140GT

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

Otros transistores... LSE65R650HT , LSE70R380GT , LSE70R450GT , LSE80R350GT , LSE80R680GT , LSE80R980GT , LSF50R160HT , LSF55R140GF , 7N65 , LSF60R180HT , LSF60R240HT , LSF60R280HT , LSF60R290HF , LSF60R380HT , LSF65R125HT , LSF65R180GF , LSF65R180GT .

History: QM3016U | CP650 | AP50PN520R | CJQ4459 | IRFU015 | C3M0120090D | AON7462

 

 
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