LSF70R450GT Todos los transistores

 

LSF70R450GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSF70R450GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO-262

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LSF70R450GT datasheet

 ..1. Size:1179K  lonten
lsd70r450gt lse70r450gt lsf70r450gt lsg70r450gt lsh70r450gt.pdf pdf_icon

LSF70R450GT

LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which

 8.1. Size:1391K  lonten
lsc70r380gt lsd70r380gt lse70r380gt lsf70r380gt lsg70r380gt.pdf pdf_icon

LSF70R450GT

LSC70R380GT/LSD70R380GT/ LSE70R380GT/LSF70R380GT/LSG70R380GT LonFET Lonten N-channel 700V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 750V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which

 8.2. Size:1238K  lonten
lsc70r640gt lsd70r640gt lsg70r640gt lsh70r640gt lsf70r640gt.pdf pdf_icon

LSF70R450GT

LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic

Otros transistores... LSF65R180HT , LSF65R280HT , LSF65R290HF , LSF65R380GF , LSF65R380GT , LSF65R380HT , LSF65R570GT , LSF70R380GT , AON7410 , LSF70R640GT , LSF80R350GT , LSF80R680GT , LSF80R980GT , LSG50R160HT , LSG60R1K4HT , LSG60R240HT , LSG60R280HT .

History: KPA1716 | NCEP058N85D

 

 

 


History: KPA1716 | NCEP058N85D

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