LSG60R950HT Todos los transistores

 

LSG60R950HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSG60R950HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 14.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de LSG60R950HT MOSFET

   - Selección ⓘ de transistores por parámetros

 

LSG60R950HT Datasheet (PDF)

 ..1. Size:1001K  lonten
 lsdn60r950ht lsg60r950ht lsh60r950ht.pdf pdf_icon

LSG60R950HT

LSDN60R950HT/LSG60R950HT/ LSH60R950HTLonFETLonten N-channel 600V, 4A, 950m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The R 950mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 7.6nCg,typapplications which require

 8.1. Size:910K  lonten
 lsg60r2k5ht lsh60r2k5ht.pdf pdf_icon

LSG60R950HT

LSG60R2K5HT/ LSH60R2K5HTLonFETLonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5.7ADMespecially suitable for applications which require Q 4.7nCg,typsuperior pow

 8.2. Size:1260K  lonten
 lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf pdf_icon

LSG60R950HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.3. Size:1293K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf pdf_icon

LSG60R950HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl

MOSTRAR MÁS

Otros transistores... LSG50R160HT , LSG60R1K4HT , LSG60R240HT , LSG60R280HT , LSG60R290HF , LSG60R2K5HT , LSG60R380HT , LSG60R650HT , P60NF06 , LSG65R1K5HT , LSG65R280HT , LSG65R290HF , LSG65R2K5GT , LSG65R380GF , LSG65R380GT , LSG65R380HT , LSG65R570GT .

History: SPB16N50C3 | 2P7154VC

 

 
Back to Top

 


 
.