LSG60R950HT Datasheet and Replacement
Type Designator: LSG60R950HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 14.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-252
LSG60R950HT substitution
LSG60R950HT Datasheet (PDF)
lsdn60r950ht lsg60r950ht lsh60r950ht.pdf

LSDN60R950HT/LSG60R950HT/ LSH60R950HTLonFETLonten N-channel 600V, 4A, 950m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The R 950mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 7.6nCg,typapplications which require
lsg60r2k5ht lsh60r2k5ht.pdf

LSG60R2K5HT/ LSH60R2K5HTLonFETLonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5.7ADMespecially suitable for applications which require Q 4.7nCg,typsuperior pow
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl
Datasheet: LSG50R160HT , LSG60R1K4HT , LSG60R240HT , LSG60R280HT , LSG60R290HF , LSG60R2K5HT , LSG60R380HT , LSG60R650HT , P60NF06 , LSG65R1K5HT , LSG65R280HT , LSG65R290HF , LSG65R2K5GT , LSG65R380GF , LSG65R380GT , LSG65R380HT , LSG65R570GT .
History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS
Keywords - LSG60R950HT MOSFET datasheet
LSG60R950HT cross reference
LSG60R950HT equivalent finder
LSG60R950HT lookup
LSG60R950HT substitution
LSG60R950HT replacement
History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS



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