LSGC06R034W3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGC06R034W3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 79.1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 54.2 nC
Tiempo de subida (tr): 46.5 nS
Conductancia de drenaje-sustrato (Cd): 1050 pF
Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET LSGC06R034W3
LSGC06R034W3 Datasheet (PDF)
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LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
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LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
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