LSGC06R034W3 Specs and Replacement
Type Designator: LSGC06R034W3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46.5 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO-220
LSGC06R034W3 substitution
- MOSFET ⓘ Cross-Reference Search
LSGC06R034W3 datasheet
lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf
LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1... See More ⇒
lsgn04r025 lsgc04r025.pdf
LSGN04R025/LSGC04R025 Lonten N-channel 40V, 120A, 2.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and... See More ⇒
lsgn03r020 lsgg03r020 lsgc03r020.pdf
LSGN03R020/LSGG03R020/LSGC03R020 Lonten N-channel 30V, 120A, 2.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using split gate trench DMOS R DS(on),max@ V =10V 2.0m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching perf... See More ⇒
lsgc085r041w3 lsge085r041w3.pdf
LSGC085R041W3 LSGE085R041W3 Lonten N-channel 85 V, 120A, 4.1m Power MOSFET Features Product Summary VDS 85V Extremely low on-resistance R DS(on) RDS(on) 3.4m Excellent Q xR product(FOM) g DS(on) I D 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche... See More ⇒
Detailed specifications: LSG70R640GT, LSG80R2K8GT, LSG80R680GT, LSG80R980GT, LSGC03R020, LSGC04R025, LSGC04R029, LSGC04R035, STP65NF06, LSGC085R041W3, LSGC085R065W3, LSGC10R080W3, LSGC15R085W3, LSGD04R035, LSGD10R080W3, LSGE04R035, LSGE06R034W3
Keywords - LSGC06R034W3 MOSFET specs
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