LSGG03R020 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGG03R020
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 42.14 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 18 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 50 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 1830 pF
Resistencia entre drenaje y fuente RDS(on): 0.002 Ohm
Paquete / Cubierta: TO-252
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LSGG03R020 Datasheet (PDF)
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