LSGG03R020 MOSFET Datasheet: N-Ch, 30V, 120A. Full specification with pinout and replacement list

LSGG03R020 Specs and Replacement

   Type Designator: LSGG03R020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 42.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-252

LSGG03R020 substitution

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LSGG03R020 datasheet

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LSGG04R028/LSGH04R028 Lonten N-channel 40V, 120A, 2.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.8m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and... See More ⇒

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LSGG06R098W3/LSGN06R098W3 Lonten N-channel 60V, 80A, 9.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using split gate trench DMOS R DS(on).max@ V =10V 9.8m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, ... See More ⇒

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LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1... See More ⇒